FESE8AT datasheet(2/4 Pages) VISHAY

2 / 4 page

FESE8AT thru FESE8GT

www.vishay.com

Vishay General Semiconductor

Revision: 30-Jan-13

Document Number: 89982

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

Note

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT

FESE8GT

UNIT

Maximum

instantaneous

forward voltage

8.0 A

VF (1)

0.95

1.30

Maximum DC reverse

current

at rated

TC = 25 °C

IR (2)

μA

TC = 100 °C

500

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A

trr

Typical junction

capacitance

4.0 V, 1 MHz

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

FESE8AT

FESE8BT

FESE8CT

FESE8DT

FESE8FT

FESE8GT

UNIT

Typical thermal resistance

RJC

2.2

°C/W

RJA (1)

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AC

FESE8GT-E3/45

1.86

50/tube

Tube

100

150

Heatsink, Case Temperature, T

Free Air, Ambient Temperature, T

Resistive or Inductive Load

Temperature (°C)

100

125

150

Number of Cycles at 60 Hz

C = 100 °C

8.3 ms Single Half Sine-Wave

FESE8AT Datasheet(PDF) 2 Page - Vishay Siliconix

FESE8AT Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL