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2SC1815 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # 2SC1815
Description  Silicon Epitaxial Planar Transistor
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

2SC1815 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  2SC1815 Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited 2SC1815 Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited 2SC1815 Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited 2SC1815 Datasheet HTML 4Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
Silicon Epitaxial Planar Transistor
2SC1815
C019
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO
IC=0.1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IC=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=50V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
VCE=6V,IC=2mA
130
400
DC current gain
hFE
VCE=6V,IC=150mA
25
100
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=10mA
0.1
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
Transition frequency
fT
VCE=10V, IC= 1mA
f=30MHz
80
MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
130-200
200-400



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