SIS413DN datasheet(2/13 Pages) VISHAY

2 / 13 page

Vishay Siliconix

SiS413DN

www.vishay.com

Document Number: 63262

S13-0632-Rev. A, 25-Mar-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 30

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 23

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

4.6

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 2.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currenta

ID(on)

VDS  - 10 V, VGS = - 10 V

- 30

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 15 A

0.0076

0.0094



VGS = - 4.5 V, ID = - 10 A

0.0108

0.0132

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 15 A

Dynamicb

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

4280

Output Capacitance

Coss

427

Reverse Transfer Capacitance

Crss

382

Total Gate Charge

VDS = - 15 V, VGS = - 10 V, ID = - 10 A

110

VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A

35.4

Gate-Source Charge

Qgs

10.6

Gate-Drain Charge

Qgd

11.6

Gate Resistance

f = 1 MHz

0.4

1.6

3.2



Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 1.5 

ID  - 10 A, VGEN = - 10 V, Rg = 1 

Rise Time

Turn-Off DelayTime

td(off)

Fall Time

816

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 1.5 

ID  - 10 A, VGEN = - 4.5 V, Rg = 1 

100

Rise Time

150

Turn-Off DelayTime

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

TC = 25 °C

- 18

Pulse Diode Forward Current

ISM

- 70

Body Diode Voltage

VSD

IS = - 3 A, VGS = 0 V

- 0.74

- 1.2

Body Diode Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

816

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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