SIR670DP datasheet(2/9 Pages) VISHAY

2 / 9 page

Vishay Siliconix

SiR670DP

Document Number: 62863

S13-1384-Rev. A, 17-Jun-13

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 5.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.5

2.8

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 60 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0039

0.0048



VGS = 6 V, ID = 15 A

0.0047

0.0060

VGS = 4.5 V, ID = 10 A

0.0060

0.0078

Forward Transconductancea

gfs

VDS = 10 V, ID = 20 A

Dynamicb

Input Capacitance

Ciss

VDS = 30 V, VGS = 0 V, f = 1 MHz

2815

Output Capacitance

Coss

1050

Reverse Transfer Capacitance

Crss

Total Gate Charge

VDS = 30 V, VGS = 10 V, ID = 10 A

VDS = 30 V, VGS = 6 V, ID = 10 A

VDS = 30 V, VGS = 4.5 V, ID = 10 A

18.5

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Output Charge

Qoss

VDS = 30 V, VGS = 0 V

43.5

Gate Resistance

f = 1 MHz

0.5

1.8



Turn-On Delay Time

td(on)

VDD = 30 V, RL = 3 

ID  10 A, VGEN = 10 V, Rg = 1 

Rise Time

816

Turn-Off Delay Time

td(off)

Fall Time

714

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 3 

ID  10 A, VGEN = 4.5 V, Rg = 1 

Rise Time

150

Turn-Off Delay Time

td(off)

Fall Time

816

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

Pulse Diode Forward Current (tp = 100 µs)

ISM

200

Body Diode Voltage

VSD

IS = 5 A

0.78

1.1

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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