SIR844DP datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 64810

S09-0875-Rev. A, 18-May-09

www.vishay.com

Vishay Siliconix

SiR844DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

0.0015

0.0020

0.0025

0.0030

0.0035

0.0040

12243648

VGS =10 V

VGS =4.5 V

013

ID =10A

VDS =15 V

VDS =10 V

VDS =5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

840

1680

2520

3360

4200

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

ID =15A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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