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April 2015

DocID027733 Rev 1

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EVAL6491HB

Demonstration board for L6491 gate driver with smartSD

Data brief

Features

 High voltage rail up to 600 V

 dV/dt immunity: 50 V/ns in full temperature

range

 Driver current capability: 4 A source/sink

 Comparator for fault protections

 Smart shutdown function

 Integrated bootstrap diode

 Adjustable deadtime

 Interlocking function

 Switching times 15 ns rise/fall with 1 nF load

 3.3 V, 5 V TTL/CMOS inputs with hysteresis

 Compact and simplified layout

 Bill of material reduction

 Effective fault protection

 Flexible, easy and fast design

Description

The L6491 is a high voltage device manufactured

with the BCD6 “OFF-LINE” technology. It is

a single-chip half-bridge gate driver for N-channel

power MOSFETs or IGBTs, with a 4 A sink and

source current capability.

The high-side (floating) section is designed to

stand a voltage rail up to 600 V. The logic inputs

are CMOS/TTL compatible down to 3.3 V for easy

interfacing a microcontroller or DSP.

An integrated comparator is available for fast

overcurrent protection, and is also suited for other

functions such overtemperature, etc.

The EVAL6491HB board allows evaluating all of

the L6491 features while driving a power switch

with voltage rating up to 600 V in TO-220 or

TO-247 packages.

The board allows easily selecting and modifying

the values of relevant external components in

order to ease driver's performance evaluation

under different applicative conditions and fine pre-

tuning of final application's components.

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