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BST50 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BST50 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() Production specification NPN Darlington Transistor BST50;BST51;BST52 E073 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector cut-off current ICES VBE=0,VCE=45V BST50 VBE=0,VCE=60V BST51 VBE=0,VCE=80V BST52 50 50 50 nA nA nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA DC current gain hFE VCE=10V,IC=150mA VCE=10V,IC=500mA 1000 2000 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA,Tj=150℃ 1.3 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=0.5mA 1.9 V Transition frequency fT VCE=5V,IC=500mA, f=100MHz 200 MHz Turn-on Time ton 400 ns Turn-off Time toff ICon=500mA,IBon=0.5mA, IBoff=-0.5mA 1500 ns TYPICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified |
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