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IRF7484 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7484 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  HEXFET® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Description 04/16/04 www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Benefits Typical Applications l Relay replacement l Anti-lock Braking System l Air Bag PD - 94446B IRF7484 VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 8.0 V EAS Single Pulse Avalanche Energy 230 mJ IAR Avalanche Current See Fig.16c, 16d, 19, 20 A EAR Repetitive Avalanche Energy mJ TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C |
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