IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

16

23

S

Note 2

C

ies

3600

pF

C

oes

V

CE

= 25 V, V

260

pF

C

res

75

pF

Q

g

120

nC

Q

ge

I

C

= I

33

nC

Q

gc

49

nC

t

d(on)

36

ns

t

ri

27

ns

t

d(off)

160

300

ns

t

fi

180

300

ns

E

off

59

mJ

t

d(on)

38

ns

t

ri

29

ns

E

on

2.5

mJ

t

d(off)

240

ns

t

fi

340

ns

E

off

9mJ

R

thJC

0.42 K/W

R

thCK

(TO-247)

0.25

K/W

Inductive load, T

°°°°C

I

C

= I

R

G

= 5

Ω, V

Note 3

TO-247 AD Outline (IXSH)

Inductive load, T

°°°°C

I

C

= I

R

G

= 5

Ω

V

Note 3

Notes: 1.

Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2.

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

3.

Switching times may increase for V

V

increased R

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

TO-268 Outline (IXST)

IXSH 35N120B

IXST 35N120B

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161