FERD15S50 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

DocID025051 Rev 1

3/8

FERD15S50

Characteristics

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5)

PF(AV)(W)

d=tp/T

IF(AV)(A)

d = 1

d = 0.2

d = 0.1

d = 0.5

d = 0.05

100

125

150

IF(AV)(A)

= R

th(j

d=tp/T

Tamb (°C)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 4. Reverse leakage current versus

reverse voltage applied (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

PowerFLAT 5x6

tp(s)

Z th(j-c)/Rth(j- c)

IR(A)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

j = 125 °C

j = 25 °C

VR(V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values)

Figure 6. Forward voltage drop versus forward

current (typical values)

C(pF)

100

1000

10000

100

F = 1MHz

osc = 30mVRMS

j = 25

°C

VR(V)

0.1

1.0

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

IF (A)

Tj = 25°C

Tj = 125°C

VF(V)

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