Schottky Barrier Diodes (SBD)

1

Publication date: October 2003

SKH00132AED

MA2SD32

Silicon epitaxial planar type

For super high speed switching

■ Features

• I

• Small reverse current: I

■ Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Reverse voltage

30

V

Repetitive peak reverse voltage

30

V

Forward current (Average)

200

mA

Peak forward current

300

mA

Non-repetitive peak forward

1A

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current

= 10 V

0.5

µA

5

Forward voltage

0.49

0.56

V

Terminal capacitance

= 0 V, f = 1 MHz

25

pF

2

ns

■ Electrical Characteristics T

a

= 25°C ± 3°C

Marking Symbol: 8H

Unit: mm

0.80

+0.05

–0.03

0.60

+0.05

–0.03

0.12

+0.05

–0.02

0

+0

–0.05

1

2

5˚

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

1: Anode

2: Cathode

SSMini2-F1 Package

Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

90%

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

I

F

t

t

Bias Application Unit (N-50BU)

Pulse Generator

(PG-10N)

R

Wave Form

Analyzer

(SAS-8130)

R

V

R

A