STFU13N80K5 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	STFU13N80K5

Description	N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™K5 Power MOSFET in a TO-220FP ultra narrow leads package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

STFU13N80K5

Electrical characteristics

DocID028462 Rev 1

5/13

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

Source-drain current

(pulsed)

VSD

(1)

Forward on voltage

ISD = 12 A, VGS = 0 V

1.5

trr

Reverse recovery

time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V

406

Qrr

Reverse recovery

charge

5.7

µC

IRRM

Reverse recovery

current

trr

Reverse recovery

time

ISD = 12 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

600

Qrr

Reverse recovery

charge

7.9

µC

IRRM

Reverse recovery

current

Notes:

(1)Pulsed: pulse duration = 300μs, duty cycle 1.5%.

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1mA, ID = 0 V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.

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