January 2017

DocID029346 Rev 2

1/10

This is information on a product in full production.

www.st.com

STPSC10H12-Y

Automotive grade 1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



AEC-Q101 qualified



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery



PPAP capable





Description

The SiC diode, available in TO-220AC and

D²PAK, is an ultrahigh performance power

Schottky rectifier. It is manufactured using a

silicon carbide substrate. The wide band-gap

diode structure with a 1200 V rating. Due to the

Schottky construction, no recovery is shown at

turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is

independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

10 A

1200 V

175 °C

1.35 V

K

K

A

K

NC

A

TO-220AC

D²PAK

A

K