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STPSC20H12C Datasheet(PDF) 1 Page - STMicroelectronics

Part # STPSC20H12C
Description  No or negligible reverse recovery
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC20H12C Datasheet(HTML) 1 Page - STMicroelectronics

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February 2017
DocID030344 Rev 1
1/10
This is information on a product in full production.
www.st.com
STPSC20H12C
1200 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant
Description
The SiC diode, available in TO-247 LL, is an
ultrahigh performance power Schottky rectifier. It
is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of
a low VF Schottky diode structure with a 1200 V
rating. Due to the Schottky construction, no
recovery is shown at turn-off and ringing patterns
are negligible. The minimal capacitive turn-off
behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
2 x 10 A
VRRM
1200 V
Tj (max.)
175 °C
VF (typ.)
1.35 V
K
A1
A2
TO-247 LL
K
A2
A1


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