SCT50N120 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Electrical characteristics

SCT50N120

4/11

DocID027989 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage

drain current

VDS = 1200 V, VGS = 0 V

100

µA

VDS = 1200 V, VGS = 0 V,

TJ = 200 °C

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = -10 to 22 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

1.8

3.0

RDS(on)

Static drain-source

on-resistance

VGS = 20 V, ID = 40 A

mΩ

VGS = 20 V, ID = 40 A,

TJ = 150 °C

mΩ

VGS = 20 V, ID = 40 A,

TJ = 200 °C

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz,

VGS = 0 V

1900

Coss

Output capacitance

170

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 800 V, ID = 40 A,

VGS = 0 to 20 V

122

Qgs

Gate-source charge

Qgd

Gate-drain charge

Gate input resistance

f=1 MHz open drain

1.9

Table 6: Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VDD = 800 V, ID = 40 A

= 2.2 Ω, VGS = -5 to 20 V

530

µJ

Eoff

Turn-off switching energy

310

µJ

Eon

Turn-on switching energy

VDD = 800 V, ID = 40 A

= 2.2 Ω, VGS = -5 to 20 V

TJ= 150 °C

670

µJ

Eoff

Turn-off switching energy

334

µJ

Table 7: Reverse SiC diode characteristics

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

VSD

Diode forward voltage

IF = 20 A, VGS = 0 V

3.5

trr

Reverse recovery time

IF = 40 A, di/dt = 2000/ns

VDD = 800 V

Qrr

Reverse recovery charge

230

IRRM

Reverse recovery current

SCT50N120 Datasheet(PDF) 4 Page - STMicroelectronics

SCT50N120 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL