STB13NM60N datasheet(4/24 Pages) STMICROELECTRONICS

4 / 24 page

Electrical characteristics

STB13NM60N, STD13NM60N

4/24

DocID024095 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

600

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 600 V

µA

VGS = 0, VDS = 600 V,

TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

± 0.1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 5.5 A

0.28

0.36

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Input capacitance

VGS = 0, VDS = 50 V,

f = 1 MHz

-790

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-3.6

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

135

Total gate charge

VDD = 480 V, ID = 11 A,

VGS = 10 V,

(see Figure 16)

-27

Qgs

Gate-source charge

Qgd

Gate-drain charge

Gate input resistance

f=1 MHz open drain

4.7

Ω

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 5.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 15)

-3

Rise time

td(off)

Turn-off delay time

Fall time

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