STF26NM60ND datasheet(5/23 Pages) STMICROELECTRONICS

5 / 23 page

DocID025283 Rev 1

5/23

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND

Electrical characteristics

(TCASE=25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V @TC= 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 10.5 A

0.145

0.175

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1817

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-4.4

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

270

td(on)

Turn-on delay time

VDD = 300 V, ID = 10.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 23),

(see Figure 18)

-22

Rise time

14.5

td(off)

Turn-off delay time

Fall time

27.5

Total gate charge

VDD = 480 V, ID = 21 A,

VGS = 10 V,

(see Figure 19)

-54.6

Qgs

Gate-source charge

9.1

Qgd

Gate-drain charge

32.5

Intrinsic gate resistance

f = 1 MHz, ID = 0

2.5

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