STB42N60M2-EP datasheet(5/20 Pages) STMICROELECTRONICS

Part #	STB42N60M2-EP

Description	N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages

PDF	20 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

5 / 20 page

STB42N60M2-EP, STP42N60M2-EP,

STW42N60M2-EP

Electrical characteristics

DocID027327 Rev 1

5/20

Table 8: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 17 A,

RG = 4.7

Ω, VGS = 10 V

(see Figure 17: "Switching

times test circuit for

resistive load" and Figure

22: "Switching time

waveform" )

16.5

Rise time

9.5

td(off)

Turn-off-delay time

96.5

Fall time

Table 9: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Source-drain current

(pulsed)

136

VSD

(2)

Forward on voltage

VGS = 0 V, ISD = 34 A

1.6

trr

Reverse recovery time

ISD = 34 A,

di/dt = 100 A/µs,

VDD = 60 V (see Figure 22:

"Switching time waveform")

438

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

41.5

trr

Reverse recovery time

ISD = 34 A,

di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 22: "Switching

time waveform")

538

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

44.5

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STB42N60M2-EP Datasheet(PDF) 5 Page - STMicroelectronics

STB42N60M2-EP Datasheet(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Datasheet Download

Link URL