The RF Line NPN Silicon High-Frequency Transistor

1.0W, 400MHz, 28V

Rev. V1

MRF313

1

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

1

Product Image

Designed for wideband amplifier, driver or oscillator

applications in military, mobile, and aircraft radio.



Specified 28 V, 400 MHz characteristics —

Output power = 1.0 W

Power gain = 15 dB min.

Efficiency = 45% typ.



Emitter ballast and low current density for im-

proved MTBF



Common emitter for improved stability

CASE 305A–01, STYLE 1