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STP16N50M2 Datasheet(PDF) 8 Page - STMicroelectronics |
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STP16N50M2 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 21 page ![]() Electrical characteristics STD16N50M2, STF16N50M2, STP16N50M2 8/21 DocID026641 Rev 5 Figure 14: Static drain-source on-resistance Figure 15: Normalized on-resistance vs. temperature Figure 16: Output capacitance stored energy Figure 17: Source- drain diode forward characteristics RDS(on) 0.230 0 2 ID(A) (Ω) 0.240 VGS=10V 4 0.250 10 8 6 12 GIPG2606141319LM RDS(on) 1.8 1 0.6 0.2 -75 TJ(°C) (norm) -25 75 25 125 1.4 2.2 VGS=10V GIPG2606141410LM Eoss 2 1 0 0 100 VDS(V) (µJ) 400 200 300 3 500 4 GIPG26067141339LM VSD 0 4 ISD(A) (V) 2 10 6 8 0.5 0.6 0.7 TJ=-50°C TJ=150°C TJ=25°C 0.8 1 1.2 12 0.9 GIPG2606141300LM |
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