STE88N65M5 datasheet(5/14 Pages) STMICROELECTRONICS

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STE88N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(v)

Voltage delay time

= 400 V, I

= 56 A,

= 4.7

Ω, V

= 10 V

(see

Figure 17)

(see

Figure 20)

-141

r(v)

Voltage rise time

f(i)

Current fall time

c(off)

Crossing time

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

SDM

(1)

Pulse width limited by safe operating area.

Source-drain current (pulsed)

352

(2)

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

= 88 A, V

= 0

1.5

Reverse recovery time

= 84 A, di/dt = 100 A/μs

= 100 V (see

Figure 17)

544

Reverse recovery charge

μC

RRM

Reverse recovery current

Reverse recovery time

= 84 A, di/dt = 100 A/μs

= 100 V, T

= 150 °C

(see

Figure 17)

660

Reverse recovery charge

μC

RRM

Reverse recovery current

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