STF7N105K5

Electrical characteristics

DocID026184 Rev 2

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Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

=4.7 Ω,

(see Figure 15: "Test circuit for

resistive load switching times" and

Figure 20: "Switching time

waveform")

-

17.5

-

ns

Rise time

-

7

-

ns

Turn-off delay time

-

43

-

ns

Fall time

-

25

-

ns

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

4

A

Source-drain current

(pulsed)

16

A

VSD(1)

Forward on voltage

-

1.6

V

Reverse recovery time

di/dt = 100 A/µs,

Figure 17: "Test circuit for

inductive load switching and

diode recovery times"

-

370

ns

Reverse recovery charge

-

3

µC

Reverse recovery current

-

16.5

A

Reverse recovery time

di/dt=100 A/µs, Tj=150 °C

Figure 17: "Test circuit for

inductive load switching and

diode recovery times"

-

600

ns

Reverse recovery charge

-

4.4

µC

Reverse recovery current

-

14.5

A

Notes:

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.