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LET16045C Datasheet(PDF) 1 Page - STMicroelectronics |
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LET16045C Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() This is information on a product in full production. April 2014 DocID022224 Rev 3 1/9 LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Figure 1. Pin out Features • Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. M243 epoxy sealed 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code Package Branding LET16045C M243 LET16045C www.st.com |
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