STD3N40K3 datasheet(3/16 Pages) STMICROELECTRONICS

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STD3N40K3

Electrical ratings

Doc ID 023398 Rev 1

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

400

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

1.2

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

8.0

PTOT

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 k

Ω)

2500

dv/dt (2)

ISD < 2 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

4.17

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

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