STFU24N60M2 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STFU24N60M2

Description	N-channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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September 2015

DocID027630 Rev 2

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This is information on a product in full production.

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STFU24N60M2

N-

channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2

Power MOSFET in a TO-220FP ultra narrow leads package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max

ID

STFU24N60M2

600 V

0

.19 Ω

18 A



Extremely low gate charge



Lower RDS(on) x area vs previous generation



Low gate input resistance



100% avalanche tested



Zener-protected

Applications



Switching applications



LLC converters, resonant converters

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STFU24N60M2

24N60M2

TO-220FP ultra narrow leads

Tube

TO-220FP

ultra narrow leads

1

2

3

AM15572v1_no_tab

D(2)

G(1)

S(3)

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STFU24N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

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