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STH140N8F7-2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STH140N8F7-2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() October 2014 DocID026821 Rev 2 1/15 This is information on a product in full production. www.st.com STH140N8F7-2 N- channel 80 V, 3.3 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STH140N8F7-2 80 V 4 mΩ 90 A 200 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STH140N8F7-2 140N8F7 H2PAK-2 Tape and reel |
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