IPN2M50T-H datasheet(6/25 Pages) STMICROELECTRONICS

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Electrical ratings

STIPN2M50T-H

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DocID028651 Rev 5

Electrical ratings

2.1

Absolute maximum ratings

Table 3: Inverter part

Symbol

Parameter

Value

Unit

VDSS

MOSFET blocking voltage (or drain-source voltage) for

each MOSFET (VIN(1)= 0)

500

± ID

Continuous current each MOSFET

± IDP(2)

Peak drain current each MOSFET (less than 1 ms)

PTOT

Each MOSFET total dissipation at TC = 25 °C

10.4

Notes:

(1)Applied among HINi, LINi and GND for i = U, V, W.

(2)Pulse width limited by max. junction temperature.

Table 4: Control part

Symbol

Parameter

Min.

Max.

Unit

VOUT

Output voltage applied among OUTU, OUTV, OUTW - GND

Vboot - 21

Vboot + 0.3

VCC

Low voltage power supply

- 0.3

VCIN

Comparator input voltage

- 0.3

VCC + 0.3

Vop+

Op-amp non-inverting input

- 0.3

VCC + 0.3

Vop-

Op-amp inverting input

- 0.3

VCC + 0.3

Vboot

Bootstrap voltage

- 0.3

620

VIN

Logic input voltage applied among HIN, LIN and GND

- 0.3

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Open-drain voltage

- 0.3

∆VOUT/dT

Allowed output slew rate

V/ns

Table 5: Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each pin and

heatsink plate (AC voltage, t = 60 s)

1000

Power chip operating junction temperature

-40 to 150

°C

Module case operation temperature

-40 to 125

°C

2.2

Thermal data

Table 6: Thermal data

Symbol

Parameter

Value

Unit

Rth(j-c)

Thermal resistance junction-case

°C/W

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