SI7392DP datasheet(2/5 Pages) VISHAY

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Si7392DP

Vishay Siliconix

www.vishay.com

Document Number: 72165

S-41427—Rev. D, 26-Jul-04

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 70_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 15 A

0.008

0.00975

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 13 A

0.011

0.01375

Forward Transconductancea

gfs

VDS = 15 V, ID = 15 A

Diode Forward Voltagea

VSD

IS = 4.1 A, VGS = 0 V

0.75

1.1

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 15 A

3.5

Gate-Drain Charge

Qgd

2.6

Gate-Resistance

0.5

1.6

2.7

Turn-On Delay Time

td(on)

Rise Time

VDD = 15 V, RL = 15 W

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.7 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

012345

VGS = 10 thru 4 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

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