STGP3NC120HD datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STGB3NC120HD, STGF3NC120HD, STGP3NC120HD

4/16

Doc ID 11089 Rev 4

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

1200

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC= 3 A

VGE= 15 V, IC= 3 A, TJ=125 °C

2.3

2.2

2.8

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250µA

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

VCE = 1200 V, TJ=125 °C

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE =± 20 V

± 100

gfs

(1)

Pulse duration: 300 µs, duty cycle 1.5%

Forward transconductance

VCE = 25 V, IC= 3 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz, VGE=0

470

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 960 V,

IC= 3 A,VGE=15 V

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