STGIPQ8C60T-HZ datasheet(5/25 Pages) STMICROELECTRONICS

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STGIPQ8C60T-HZ

Absolute maximum ratings

(Tj= 25°C unless otherwise noted).

Table 3. Inverter parts

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage each IGBT (VIN

(1) = 0 V)

Applied between HINx, LINx and GND for x = U, V, W.

600

Continuous collector current each IGBT

ICP

(2)

Pulsed width limited by max junction temperature.

Peak collector current each IGBT (less than 1ms)

PTOT

Total dissipation at TC=25 °C each IGBT

19.2

tscw

Short-circuit withstand time

(VCE = 300 V, TJ = 125 °C, VCC = Vboot = 15 V,

VIN

(1)= 0 to 5 V)

5µs

Table 4. Control parts

Symbol

Parameter

Min

Max

Unit

VCC

Low voltage power supply

-0.3

VBOOT

Bootstrap voltage

-0.3

620

VOUT

Output voltage between OUTU, OUTV, OUTW

and GND

VBOOT - 21 VBOOT + 0.3

VCIN

Comparator input voltage

-0.3

VCC + 0.3

Vop+

Op-amp non-inverting input

-0.3

VCC + 0.3

Vop-

Op-amp inverting input

-0.3

VCC + 0.3

VIN

Logic input voltage applied between HINx, LINx

and GND

-0.3

VT/SD/OD

Open drain voltage

-0.3

∆V

OUT/dt

Allowed output slew rate

V/ns

Table 5. Total system

Symbol

Parameter

Value

Unit

VISO

Isolation withstand voltage applied between each pin and

heat sink plate (AC voltage, t = 60sec.)

1500

Vrms

Power chips operating junction temperature

-40 to 150

°C

Module case operation temperature

-40 to 125

°C

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