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STGWA15M120DF3 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGWA15M120DF3
Description  Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA15M120DF3 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
October 2014
DocID026222 Rev 2
1/19
19
STGW15M120DF3
STGWA15M120DF3
Trench gate field-stop IGBT, M series
1200 V, 15 A low loss
Datasheet
- production data
Figure 1.Internal schematic diagram
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
•
Industrial drives
•
UPS
•
Solar
•
Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW15M120DF3
G15M120DF3
TO-247
Tube
STGWA15M120DF3
G15M120DF3
TO-247 long leads
Tube
www.st.com


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