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STGW25H120DF2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGW25H120DF2
Description  Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW25H120DF2 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
March 2015
DocID023752 Rev 4
1/17
STGW25H120DF2,
STGWA25H120DF2
Trench gate field-stop IGBT, H series
1200 V, 25 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 2.1 V (typ.) @ IC = 25 A
• 5 µs minimum short circuit withstand time at
TJ=150 °C
• Safe paralleling
• Very fast recovery antiparallel diode
• Low thermal resistance
Applications
• Uninterruptible power supply
• Welding machines
• Photovoltaic inverters
• Power factor correction
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Moreover, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Table 1. Device summary
Order code
Marking
Package
Packaging
STGW25H120DF2
G25H120DF2
TO-247
Tube
STGWA25H120DF2
G25H120DF2
TO-247 long leads
Tube
www.st.com


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