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STGWA25S120DF3 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGWA25S120DF3
Description  Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA25S120DF3 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
December 2014
DocID026374 Rev 2
1/18
STGW25S120DF3,
STGWA25S120DF3
Trench gate field-stop IGBT, S series
1200 V, 25 A low drop
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.6 V (typ.) @ IC = 25 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
Table 1. Device summary
Order code
Marking
Package
Packing
STGW25S120DF3
G25S120DF3
TO-247
Tube
STGWA25S120DF3
G25S120DF3
TO-247 long leads
Tube
www.st.com


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