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STGW60V60F Datasheet(PDF) 7 Page - STMicroelectronics |
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STGW60V60F Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() DocID024701 Rev 2 7/14 STGW60V60F Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area for TO-247 Figure 10. Normalized VGE(th) vs. junction temperature Figure 11. Normalized BVCES vs. junction temperature AM17145v1 0 10 20 30 40 50 60 70 80 90 100 110 110 Ic [A] f [kHz] rectangular current shape, (duty cycle=0.5, V CC = 400V, RG=4.7Ω, V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C AM17146v1 0.01 0.1 1 10 100 110 100 IC (A) VCE (V) (single pulse T C =25 °C, T J <=175 °C; VGE =15 V) 1 μs 100 μs 1 ms VCE= VGE IC= 1mA AM17149v1 0.6 0.7 0.8 0.9 1.0 1.1 -50 -25 0 25 50 75 100 125 150 175 VGE(th) norm (V) TJ(ºC) AM17150v1 0.9 1.0 1.1 -50 -25 0 255075 100 125 150 175 BVces norm (V) TJ(ºC) IC= 2 mA Figure 12. Capacitance variations Figure 13. Gate charge vs. gate-emitter voltage AM17151v1 10 100 1000 10000 0.1 1 10 C (pF) VCE (V) C res C oes C ies f= 1MHz, V GE =0 AM17152v1 0 2 4 6 8 10 12 14 16 0100 200 300 VGE (V) Qg (nC) |
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