STGIPQ3H60T-HZ datasheet(7/26 Pages) STMICROELECTRONICS

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STGIPQ3H60T-HL, STGIPQ3H60T-HZ

Electrical characteristics

DocID027219 Rev 5

7/26

Electrical characteristics

TJ = 25 °C unless otherwise specified.

3.1

Inverter part

Table 7: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VIN(1)

= 0 “logic state”)

VCE = 550 V,

VCC = VBoot = 15 V

250

μA

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V,

VIN(1) = 0 - 5 V, IC = 1 A

2.15

2.6

VCC = Vboot = 15 V,

VIN(1)= 0 to 5 V, IC = 1 A,

TJ = 125 °C

1.65

Diode forward voltage

VIN(1)

= 0 “logic state”, IC = 1 A

1.8

Notes:

(1)Applied among HINx, LINx and GND for x = U, V, W.

Table 8: Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN(2) = 0 - 5 V,

IC = 1 A

(see Figure 3: "Switching time

definition")

275

tc(on)(1)

Crossover time (on)

toff(1)

Turn-off time

890

tc(off)(1)

Crossover time (off)

125

trr

Reverse recovery time

Eon

Turn-on switching

energy

µJ

Eoff

Turn-off switching

energy

Notes:

(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of

IGBT itself under the internally given gate driving conditions.

(2)Applied among HINx, LINx and GND for x = U, V, W.

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