STL11N65M5 datasheet(3/14 Pages) STMICROELECTRONICS

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DocID026330 Rev 2

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STL11N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

± 25

(1)

Limited by maximum junction temperature

Drain current (continuous) at TC = 25 °C

8.5

(1)

Drain current (continuous) at TC = 100 °C

4.9

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

(3)

When mounted on FR-4 Board of 1 inch², 2 oz Cu (t < 100 s)

Drain current (continuous) at Tpcb=25°C

1.35

ID(3)

Drain current (continuous) at Tpcb=100°C

0.86

IDM(2),(3) Drain current (pulsed)

5.4

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

1.9

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

130

dv/dt (4)

ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak ≤ V(BR)DSS, VDD = 400 V.

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.78

°C/W

Rthj-pcb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu, t<100 sec

Thermal resistance junction-pcb max

58.5

°C/W

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