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STL30N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL30N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  This is information on a product in full production. October 2013 DocID025424 Rev 1 1/15 15 STL30N10F7 N-channel 100 V, 0.027 Ω typ., 8 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1. Internal schematic diagram Features • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. PowerFLAT™ 5x6 1 2 3 4 Order code VDS RDS(on) max. ID PTOT STL30N10F7 100 V 0.035 Ω 8 A 4.8 W(1) 1. The value is rated according to Rthj-pcb. Table 1. Device summary Order code Marking Package Packaging STL30N10F7 30N10F7 PowerFLAT™ 5x6 Tape and reel www.st.com |
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Similar Description - STL30N10F7 |
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