STL45N65M5 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STL45N65M5

Description	N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 16 page

STL45N65M5

Electrical characteristics

DocID023354 Rev 2

5/16

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

22.5

ISDM(1)(2)

Source-drain current

(pulsed)

VSD(3)

Forward on voltage

VGS = 0 V, ISD = 22.5 A

1.5

trr

Reverse recovery time

ISD = 22.5 A, di/dt = 100 A/µs,

VDD = 100 V (see Figure 17: "

Test circuit for inductive load

switching and diode recovery

times")

346

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 22.5 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C (see

Figure 17: " Test circuit for

inductive load switching and

diode recovery times")

432

Qrr

Reverse recovery charge

8.4

µC

IRRM

Reverse recovery current

Notes:

(1) The value is rated according to Rthj-case and limited by package.

(2) Pulse width is limited by safe operating area.

(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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