STL75N8LF6 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL75N8LF6

Description	N-channel 80 V, 5.6 mΩ, 18 A, PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 16 page

Electrical characteristics

STL75N8LF6

4/16

Doc ID 018820 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 80 V,

VDS = 80 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = +20 / -16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 9 A

VGS= 5 V, ID= 9 A

5.6

7.4

8.2

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

6895

516

207

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 40 V, ID = 18 A

VGS = 4.5 V

(see Figure 14)

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-1.52

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