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STL100N6LF6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL100N6LF6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() DocID018491 Rev 3 5/15 STL100N6LF6 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I SD Source-drain current - 22 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 84 A V SD (2) 2. Pulsed: pulse duration=300μs, duty cycle 1.5% Forward on voltage I SD = 22 A, V GS = 0 - 1.3 V t rr Reverse recovery time I SD = 20 A, di/dt = 100 A/μs, V DD = 48V, T J = 150 °C (see Figure 15) -34 ns Q rr Reverse recovery charge - 44 nC I RRM Reverse recovery current - 2.6 A |
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