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STP25N60M2-EP Datasheet(PDF) 7 Page - STMicroelectronics |
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STP25N60M2-EP Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() STP25N60M2-EP Electrical characteristics DocID027222 Rev 2 7/14 Figure 8: Capacitance variations Figure 9: Output capacitance stored energy Figure 10: Turn-off switching loss vs drain current Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature Figure 13: Source-drain diode forward characteristics 1000 100 10 1 0.1 10 V DS(V) 1 100 C ISS C OSS C RSS C (pF) GIPG181120141549ALS 2 0 0 100 V DS(V) 400 200 300 4 500 600 6 8 E OSS (μJ) GIPG181120141603ALS 6 4 0 1 I D(A) 4 2 3 8 5 6 10 12 E OSS (μJ) GIPG261120141106ALS 0.9 0.8 0.7 0.6 -75 -25 T J(°C) 1.0 25 75 125 I D = 250 µA 1.1 V GS(th) (norm) GIPG181120141615ALS 1.4 1.0 0.6 0.2 -75 T J(°C) -25 75 25 125 1.8 2.2 V GS = 10 V R DS(on) (norm) GIPG181120141628ALS 0 4 I SD(A) 8 0 0.6 0.7 0.9 0.8 1.0 1.1 T J=-50°C T J=-50°C T J=-50°C 12 16 V SD (V) GIPG191120141427ALS |
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