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STS5DPF20L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS5DPF20L Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() Obsolete Product(s) - Obsolete Product(s) 3/9 STS5DPF20L ELECTRICAL CHARACTERISTICS(CONTINUED) Table 7: Switching On Table 8: Switching Off Table 9: Source-Drain Diodef (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V, ID = 2 A, RG= 4.7 Ω, VGS = 4.5 V (see Figure 15)) 25 35 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 24 V, ID = 4 A, VGS = 5 V (see, Figure 18) 12.5 5 3 16 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V, ID = 2.5 A, RG= 4.7 Ω, VGS = 4.5 V (see, Figure 15) 125 35 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 5A ISDM (2) Source-drain Current (pulsed) 20 A VSD (1) Forward On Voltage ISD = 5 A, VGS = 0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100 A/µs VDD = 15V, Tj = 150°C (see, Figure 16) 45 36 1.6 ns nC A |
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