| Electronic Components Datasheet Search |
|
STS10P4LLF6 Datasheet(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STS10P4LLF6 Datasheet(HTML) 1 Page - STMicroelectronics |
|
1 / 14 page ![]() December 2014 DocID025774 Rev 3 1/14 This is information on a product in full production. www.st.com STS10P4LLF6 P- channel 40 V, 0.0125 Ω typ., 10 A, StripFET™ F6 Power MOSFET in SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STS10P4LLF6 40 V 0.015 10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STS10P4LLF6 10K4L SO-8 Tape and reel For the P-channel MOSFET actual polarity of voltages and current have to be reversed |
Similar Part No. - STS10P4LLF6 |
|
Similar Description - STS10P4LLF6 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |