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STT5N2VH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STT5N2VH5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  This is information on a product in full production. March 2014 DocID026116 Rev 1 1/13 STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package Datasheet — production data Figure 1. Internal schematic diagram Features • Very low profile package • Conduction losses reduced • Switching losses reduced • 2.5 V gate drive • Very low threshold device Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. 1 2 3 4 5 6 SOT23-6L Order code VDS RDS(on) max ID PTOT STT5N2VH5 20 V 0.04 Ω (V GS =2.5 V) 5 A 1.6 W Table 1. Device summary Order code Marking Packages Packaging STT5N2VH5 STD1 SOT23-6L Tape and reel www.st.com |
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