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TPV590 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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TPV590 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0mA 45 V BVCER IC = 10 mA RBE = 10 Ω 45 V BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5 V IC = 100 mA 20 --- COB VCB = 28 V f = 1.0 MHz 2.0 3.0 pF PG VCE = 20 V IC = 150 mA P OUT = 0.5 W f = 860 MHz 13 14 dB IMD3 VCE = 20 V IC = 150 mA Pref = 0.5 W Vision = -8dB Chroma = -16dB Sound =-10 dB -58 dBc PACKAGE STYLE 205 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE NPN SILICON RF POWER TRANSISTOR TPV590 DESCRIPTION: The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: •• Gold Metallization •• Emitter Ballasting •• High Gain MAXIMUM RATINGS IC 300 mA VCBO 45 V PDISS 5.3 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OCto +200 OC θθ JC 33 OC/W |
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