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STW56N65M2-4 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW56N65M2-4 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() This is information on a product in full production. December 2014 DocID027307 Rev 1 1/12 STW56N65M2-4 N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2 Power MOSFET in a TO247-4 package Datasheet - production data Figure 1. Internal schematic diagram Features • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order code VDS RDS(on) max ID STW56N65M2-4 650 V 0.062 Ω 49 A Table 1. Device summary Order code Marking Package Packaging STW56N65M2-4 56N65M2 TO247-4 Tube www.st.com |
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