T810T-8T datasheet(3/9 Pages) STMICROELECTRONICS

Part #	T810T-8T

Description	8 A logic level Triac

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 9 page

DocID026686 Rev 1

3/9

T810T-8T

Characteristics

Table 4. Static characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 11.3 A, tp = 380 µs

Tj = 25 °C

Max.

1.55

Vt0

(1)

Threshold voltage

Tj = 150 °C

Max.

0.85

(1)

Dynamic resistance

Tj = 150 °C

Max.

IDRM

IRRM

VDRM = VRRM = 800 V

Tj = 25 °C

Max.

5µA

Tj = 125 °C

0.8

VDRM = VRRM = 600 V

Tj = 150 °C

Max.

2.4

1. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

1.9

°C/W

Rth(j-a)

Junction to ambient (DC)

°C/W

Figure 1. Maximum power dissipation versus

on-state rms current

Figure 2. On-state rms current versus case

temperature

Figure 3. On-state rms current versus ambient

temperature (free air convection)

Figure 4. Relative variation of thermal

impedance versus pulse duration

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