VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC7927

SONET/SDH 2.5Gb/s Laser Diode Driver

Page 2

G52201-0, Rev 3.0

04/05/01/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Table 1: Signal Pin Reference

Table 2: Mux Select Logic Table

Table 3: Absolute Maximum Ratings

Table 4: Recommended Operating Conditions

NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the

Maximum Case Temperature” for detailed maximum temperature calculations.

Signal

Type

Level

# Pins

Description

DIN, NDIN

In

ECL

2

Data Input and Data Reference, On-chip 50

Ω Termination

MK, NMK

Out

ECL

2

Data Density Differential Outputs

NIOUT

Out

—

1

Laser Modulation Current Output (Complementary)

IOUT

Out

—

1

Laser Modulation Current Output (to Laser Cathode)

VSS

Pwr

Pwr

2

Negative Voltage Rail

GND

Pwr

Pwr

5

Positive Voltage Rail

VIP

In

DC

1

Modulation Gate Node

MIP

In

DC

1

Modulation Source Node

VIB

In

DC

1

Bias Gate Node

MIB

In

DC

1

Bias Source Node

IBIAS

Out

DC

1

Laser Bias Output (To Laser Cathode)

CLK, NCLK

In

ECL

2

Clock Input and Clock Reference, On-chip 50

Ω Termination

DINTERM

In

DC

1

Data Reference

CLKTERM

In

DC

1

Clock Reference

DCC

In

DC

1

Duty Cycle Control, Leave Floating

SEL

In

DC

1

Clk/Non-clk Data Select

Total Pins

——

24

SEL

Mode Select

Clocked Data In

GND

Non-clocked Data In

N/C

Non-clocked Data In

Symbol

Rating

Limit

Negative Power Supply Voltage

Maximum Junction Temperature

-55°C to + 125°C

Storage Temperature

-65°C to +150°C

Symbol

Parameter

Min

Typ

Max

Units

Conditions

GND

Positive Voltage Rail

—

0

—

V

VSS

Negative Voltage Rail

-5.5

-5.2

-4.9

V

-40

—

°C

Power dissipation = 1.3W

Junction Temperature

——

125

°C