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TUSB1211 Datasheet(PDF) 8 Page - Texas Instruments

Part # TUSB1211
Description  Stand-Alone USB Transceiver Chip
PDF  80 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TUSB1211 Datasheet(HTML) 8 Page - Texas Instruments

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TUSB1211
SLLSE80B – MARCH 2011 – REVISED JUNE 2015
www.ti.com
4
Specifications
4.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Main battery supply voltage
Continuous
0
5.0
V
The product will have negligible reliability
VBAT
(2)
impact for pulsed voltage spikes of 5.5 V for a
Main battery supply voltage pulsed
5.5
V
total (cumulative over lifetime) duration of 5
milliseconds
VDDIO
IO supply voltage
Continuous
1.98
V
Where VDD represents the voltage applied to
Voltage on any input except VDDIO,
the power supply pin associated with the
–0.3
1.0 × VDD + 0.3
V
VBAT, and VBUS pads
input
DP or DM or ID pins short-circuited to VBUS
DP, DM, ID high voltage short circuit
supply, in any mode of TUSB1211 operation,
5.25
V
continuously for 24 hours
DP or DM or ID pins short-circuited to GND in
DP, DM, ID low voltage short circuit
any mode of TUSB1211 operation,
0
V
continuously for 24 hours
VBUS input
(3)
–2
20
V
TA
Ambient temperature
–40
85
°C
TJ
Junction temperature
–40
150
°C
Tstg
Storage temperature
–55
125
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Section 4.3 is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If VBAT exceeds above rating a device to drop down the voltage before applied to the device.
(3)
If VBUS exceeds above rating an external voltage protection on the line is mandatory between the VBUS line and the TUSB1211.
4.2
ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
4.3
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
VBAT
Battery supply voltage
VBAT_ACTIVE
2.7
3.6
4.8
V
When VDD33 is supplied internally
3.15
Battery supply voltage for USB 2.0 compliancy
VBAT_CERT
V
When VDD33 is shorted to VBAT
(USB 2.0 certification)
3.05
externally
Battery supply voltage for charger detect in
2.4
VBAT_DB
VBAT_DB
V
“dead-battery condition”
VDDIO
IO supply voltage
VDDIO_ACTIVE
1.62
1.8
1.95
V
TA
Ambient temperature range
–40
85
°C
TJ
Junction temperature
For parametric compliance
–40
125
°C
8
Specifications
Copyright © 2011–2015, Texas Instruments Incorporated
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Product Folder Links: TUSB1211



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