| Electronic Components Datasheet Search |
|
MDF1933TH Datasheet(PDF) 4 Page - MagnaChip Semiconductor. |
|
|
|||||||||||||||||||||||||||||
MDF1933TH Datasheet(HTML) 4 Page - MagnaChip Semiconductor. |
|
4 / 6 page ![]() Nov. 2014. Rev 1.0 4 MagnaChip Semiconductor Ltd. Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature Fig.11 Transient Thermal Response Curve 25 50 75 100 125 150 0 10 20 30 40 50 T C, Case Temperature [،ة] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 ،ط Notes : Duty Factor, D=t 1/t2 PEAK T J = PDM * Z¥èJC * R¥èJC(t) + TC single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Rectangular Pulse Duration [sec] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 4000 5000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 10 20 30 40 50 60 0 2 4 6 8 10 V DS = 40V ※ Note : I D = 50A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 1 ms 100 ms 10 ms DC 100 us Operation in This Area is Limited by R DS(on) Single Pulse T J=Max rated T C=25،ة V DS, Drain-Source Voltage [V] |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |